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 R
N N-CHANNEL MOSFET
JCS630
MAIN CHARACTERISTICS
Package
ID VDSS Rdson @Vgs=10V Qg
UPS
9.0 A 200 V 0.4 22 nC
APPLICATIONS
High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 22pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
Crss ( 22pF) dv/dt RoHS
ORDER MESSAGE
Order codes JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O-F-N-B IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F Package Packaging Tube Tube Brede Tube Tube Tube Tube
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ABSOLUTE RATINGS (Tc=25)
JCS630V/R JCS630F Value JCS630S/B/C 200 9.0 5.7 9.0* 5.7* Unit V A A
Parameter Drain-Source Voltage Drain Current
Symbol VDSS ID T=25 T=100 IDM
-continuous
1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dt note 3
36
36*
A
VGSS
30
V
EAS
160
mJ
IAR
9.0
A
EAR
7.2
mJ
dv/dt
5.5
V/ns
Power Dissipation
PD TC=25 -Derate above 25 TJTSTG
48
72
38
W
0.39
0.57
0.3
W/
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes
-55+150
TL
300
* *Drain current limited by maximum junction temperature
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Tests conditions Min Typ Max Units Parameter Symbol
ELECTRICAL CHARACTERISTICS
Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V 200 V
BVDSS/ ID=250A, referenced to 25 TJ VDS=200V,VGS=0V, TC=25 VDS=160V, IGSSF VDS=0V, TC=125
-
0.2
-
V/
IDSS
-
-
10 100 100
A A nA
VGS =30V
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
RDS(ON)
VGS =10V , ID=4.5A VDS = 40V, ID=4.5Anote 4 VDS=25V, VGS =0V, f=1.0MHZ
-
0.34 0.4
gfs
-
7.05
-
S
Dynamic Characteristics Ciss Coss Crss 550 720 85 22 110 29 pF pF pF
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td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=9.0A VGS =10V note 45 VDD=100V,ID=9.0A,RG=25 note 45 11 30 ns ns ns ns nC nC nC
ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 70 150 60 130 65 140 22 3.6 10.2 29 -
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 9.0 A
ISM
-
-
36
A
VGS=0V,
IS=9.0A
-
-
1.5
V
trr Qrr
VGS=0V, IS=9.0A dIF/dt=100A/s (note 4)
-
140 0.87
-
ns C
THERMAL CHARACTERISTIC
Max JCS630V/R JCS630S/B/C JCS630F 2.70 110 1.74 62.5 3.33 62.5 Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) Unit /W /W
Rth(j-A) Thermal Resistance, Junction to Ambient
1 2L=25mH, IAS=9.0A, VDD=50V, RG=25 , TJ=25 3ISD 9.0A,di/dt 200A/s,VDDBVDSS, TJ=25 4300s,2 5
Notes: 1Pulse width limited by maximum junction temperature 2L=25mH, IAS=9.0A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 9.0A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics
10
ID Drain Current[A]
150
1
25
0.1
Notes 1.250s pulse test 2.VDS=40V
2 4 6 8 10
VGS Gate-Source Voltage[V]
On-Resistance Variation vs. Drain Current and Gate Voltage
Body Diode Forward Voltage Variation vs. Source Current and Temperature
IDR Reverse Drain Current[A]
10
1
150 25
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD Source-Drain voltage[V]
Capacitance Characteristics
Gate Charge Characteristics
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ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature
1.2
3.0
BV DS (Normalized)
2.5
R D(on ) (Normalized)
1.1
2.0
1.0
1.5
1.0
0.9
Notes 1. VGS=0V 2. ID=250A
-50 -25 0 25 50 75 100 125 150
0.5
Notes 1. VGS=10V 2. ID=4.5A
-50 -25 0 25 50 75 100 125 150
0.8 -75
0.0 -75
T j [ ]
Tj [ ]
Maximum Safe Operating Area For JCS630V/R/S/B/C
Maximum Safe Operating Area For JCS630F
Maximum Drain Current vs. Case Temperature
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Transient Thermal Response Curve For JCS630V/R
ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve For JCS630S/B/C
Transient Thermal Response Curve For JCS630F
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PACKAGE MECHANICAL DATA IPAK
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Unitmm
PACKAGE MECHANICAL DATA DPAK
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Unitmm
PACKAGE MECHANICAL DATA TO-262
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Unitmm
PACKAGE MECHANICAL DATA TO-263
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Unitmm
PACKAGE MECHANICAL DATA TO-220C
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Unitmm
PACKAGE MECHANICAL DATA TO-220MF
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1. 2.
NOTE
Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1.
3. 4.
99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533
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